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| Transistors DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Digital transistors (built-in resistor) DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) DTA115TH 1.6 0.85 0.27 (1) 0.5 0.5 (3) (2) 0.12 0~0.1 0.7 1.0 1.6 ROHM : EMT3H EIAJ : SC-89 (1)Emitter (2)Base (3)Collector (1) (2) 0.2 0.5 0.5 DTA115TE 0.3 (3) 0.8 0.15 0.55 0.1Min. 0~0.1 0.7 !Circuit schematic C R1 ROHM : EMT3 EIAJ : SC-75A 1.6 0.2 1.0 1.6 B (1)Emitter (2)Base (3)Collector E (1) DTA115TUA E : Emitter C : Collector B : Base 0.3 (3) 0.65 0.65 0.7 1.25 2.1 0.15 0.2 (2) 1.3 0.9 Each lead has same dimensions 0.1~0.4 0~0.1 2.0 ROHM : UMT3 EIAJ : SC-70 (1)Emitter (2)Base (3)Collector (1) DTA115TKA 0.4 (3) 1.6 2.8 0.15 0.3~0.6 0~0.1 0.8 1.1 0.95 0.95 1.9 2.9 (2) Each lead has same dimensions ROHM : SMT3 EIAJ : SC-59 (1)Emitter (2)Base (3)Collector DTA115TSA 3 4 2 (15Min.) 3Min. 0.45 Taping specifications 2.5 5 (1)(2)(3) 0.5 0.45 ROHM : SPT EIAJ : SC-72 (1)Emitter (2)Collector (3)Base Transistors !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -50 -50 -5 -100 150 200 300 150 -55 ~ +150 C C mW Unit V V V mA DTA115TH / DTA115TE Collector power DTA115TUA / DTA115TKA dissipation DTA115TSA Junction temperature Storage temperature !Package, marking, and packaging specifications Part No. Package Marking Packaging code Basic ordering unit (pieces) DTA115TH EMT3H 99 T2L 8000 DTA115TE DTA115TUA DTA115TKA DTA115TSA EMT3 99 TL 3000 UMT3 99 T106 3000 SMT3 99 T146 3000 SPT - TP 5000 !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. -50 -50 -5 - - - 100 70 - Typ. - - - - - - 250 100 250 Max. - - - -0.5 -0.5 -0.3 600 130 - Unit V V V A A V - k MHZ IC=-50A IC=-1mA IE=-50A VCB=-50V VEB=-4V Conditions IC/IB=-1mA/-0.1mA IC=-1mA , VCE=-5V - VCE=-10V , IE=5mA , f=100MHZ Transition frequency Transition frequency of the device. |
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